You can download here the book of abstracts

4th Area Selective Deposition workshop (ASD 2019)
Overview | Session chairs: Robert Clark (TEL) & C. Vallee (CEA)

Invited: Area Selective Deposition Challenges and Opportunities for Patterning solution
Efrain Altamirano-Sanchez, B.T. Chan, Annelies Delabie, Silvia Armini and Steven Scheer, IMEC

Deposition / etch and modeling  | Session chairs:  Robert Clark (TEL) & C. Vallee (CEA)

Invited: Challenges and opportunities for high volume manufacturing of selective processes
K.L. Nardi, D.M. Hausmann, D.C. Smith, P.C. Lemaire, K. Sharma, LAM Research

Invited: Modeling and selectivity loss during coupled deposition/etching ASD processes
Gregory Parsons, North Carolina State University

Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain selectivities > 10 nm
A. Mameli, F. Roozeboom, P. Poodt, TNO - Holst Centre

ASD by combining ALD and selective etching: proof of concept for Ru
Martijn F.J. Vos, Sonali N. Chopra, Marcel A. Verheijen, John G. Ekerdt, Sumit Agarwal, Wilhelmus M.M. (Erwin) Kessels, Adriaan J.M. Mackus Eindhoven, University of Technology, The University of Texas at Austin, Colorado School of Mines

Catalysis and metals | Session chair: Erwin Kessels (TU/e)

Invited: Chemical selectivity and nucleation during ALD of Ru with the RuO4 precursor
M. M. Minjauw, H. Rijckaert, I. Van Driessche, C. Detavernier, J. Dendooven, CoCooN Group and SCRIPTS Group, Ghent University

Bimetallic nanocomposite-catalysts fabricated by area selective ALD and applications
Rong Chen, Kun Cao, Yun Lang, Jiaming Cai, Bin Shan, Huazhong University of Science and Technology, Wuhan

In-situ area selective ALD in a scanning electron microscope
G. Jeevanandam, R. van Tol, Y. van Goozen, P. Kruit, C.W. Hagen, Delft University of Technology

Self-Assembled Monolayers (SAM) 1 | Session chair: Stacey Bent (Standford)

Invited: Materials design in self-aligned processes - the potential integration of area selective depositions
Rudy Wojtecki, Anuja DeSilva, Son Nguyen, Magi Mettry, Alexander Hess, Noel Arellan, IBM Research-Almaden, IBM Semiconductor Research

Structural Phases of Alkanethiolate Self-Assembled Monolayers (C1-12) on Cu Studied by Density Functional Theory
J. J. Clerix, A. Sanz-Matias, S. Armini, J. N. Harvey, A. Delabiea, Department of Chemistry - KU Leuven, imec

Vapor Phase Thiol Self-Assembled Monolayers for DoD ASD
Sebastiaan J. F. Herregods, Tinne Delande, Zsolt Tokei, Herbert Struyf, Silvia Armini, Imec

DoD ASD by a combination of ALD and organic film passivation for self-aligned via patterning
M. Pasquali, S. De Gendt, S. Armini, S. Deng, G. A. Verni, A. Illiberi, M. Givens, KU Leuven, imec, ASM Belgium, ASM Microchemistry

Self-Assembled Monolayers (SAM) 2 | Session chair: Silvia Armini (imec)

Invited: Nucleation of Binary and Ternary Oxides and Metals During AS-ALD with Applications for Metal and Crystalline Films
Xin Yan, Himamshu C. Nallan, Brennan M. Coffey, Pei-Yu Chen, John G. Ekerdt, University of Texas at Austin

SAM as ALD Ru growth inhibitor in an area selective bottom up metallization scheme
I. Zyulkov, V. Madhiwal, S. Armini, S. De Gendt, KU Leuven, Imec, TU Chemnitz

The effect of Atomic Oxygen on (3-trimethoxysilylpropyl)diethylenetriamine (DETA) self assembled monolayers
J. Bogan, A. Brady-Boyd, S. Armini, R. O’Connor, Dublin City University, imec

Friday , April 5, 2019

Alternative inhibitors | Session chair: John Ekerdt (University of Texas, USA)

Invited: Selective deposition requirements for patterning applications
R. Freed, C. I. Lang, N. Alexis, Applied Materials, Santa Clara, California

Invited: Surface-reactivity-determined Patterning Technology - The Era of Atomic Crafting
Han-Bo-Ram Lee, Incheon National University

Mechanism of precursor blocking by inhibitor molecules
M.J.M. Merkx, D.M. Hausmann, W.M.M. Kessels, T.E. Sandoval, A.J.M. Mackus,
Eindhoven University of Technology, LAM Research Corporation, Universidad Técnica Federico Santa María - Santiago

Area selective Ru-ALD by amorphous carbon modification using H radicals
I. Zyulkov, E. Voronina, D. Voloshin, BT Chan, Y. Mankelevich, T. Rakhimova, S. Armini, S. De Gendt KU Leuven, Lomonosov, Moscow State University

Advanced materials and processes  | Session chairs: Annelies Delabie (Imec) & Andrea Illiberi(ASM)

Invited: Advances and Challenges in Selective Deposition
Kandabara Tapily, Shuji Azumo, Shinichi Ike, Yumiko Kawano, Kai-Hung Yu, Gyana Pattanaik, Sophia Rogalskyj, Danny Newman, R. Clark, Cory Wajda, Takaaki Tsunomura, Gert Leusink, Yusaku Kashiwagi, TEL Technology Center America, Tokyo Electron Technology Solutions Tokyo, TEL Tokyo

Area Selective Deposition: how plasma can favor the topographically selective deposition on 3D substrate
C. Vallée, M. Bonvalot, R. Gassilloud, V. Pesce, A. Chaker, S. Belahcen, N. Possémé, B. Pelissier, P. Gonon, A. Bsiesy,
Universite Grenoble Alpes, University of Tsukuba, CEA-LETI

Invited: Inductively coupled plasma-polymerized CFx inhibition layers for selective oxide and metal deposition
Necmi Biyikli, University of Connecticut

Formation and in-situ characterization of metal oxides from infiltrated polymers
M. Snelgrove, J. Bogan, P. G. Mani-Gonzalez, R. Lundy, P. Swift, M. Morris, G. Hughes, R. O’Connor, Dublin City University, Autonomous University of Ciudad Juarez, Trinity College Dublin, National Centre for Plasma Science and Technology Dublin

Selective area growth of diamond on ALD coated surfaces
R. Ramaneti, G. Degutis, K. J. Sankaran, P. Pobedinskas, M. K. Van Bael, K. Haenen, Hasselt University, IMOMEC-imec

Defects control | Session chair: Mark Saly (AMAT)

Invited: Selective Epitaxial growth
J. Tolle ASM
Surface diffusion for defect mitigation during ASD of Ru
J. Soethoudt, F. Grillo, E. Marques, J. R. van Ommen, H. Hody, A. Delabie, KU Leuven, imec, TU Delft, ETH Zurich

Invited: Scatterometry and AFM measurement combination for area selective deposition process characterization
Mohamed Saib, Alain Moussa, Anne-Laure Charley, Philippe Leray, Joey Hung, Roy Koret, Avron Ger, Shaoren Deng, Andrea Illiberi, Jan Willem Maes, Gabriel Woodford and Michael Strauss, Imec, Nova Measuring Instruments, ASM Belgium, Thermo Fisher Scientific


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ALD Academy on Nucleation and Area-Selective Deposition



There will be an ALD Academy on Nucleation and Area-Selective Deposition at Eindhoven University of Technology on April 3, 2019, the day before the 4th Area Selective Deposition workshop (ASD2019) in Leuven, Belgium. For those interested in both events, there will be transportation from Eindhoven to Leuven.

Area-selective deposition (ASD) has recently developed into an active field of research in both academia and industry, triggered by the fact that alignment is becoming a bottleneck in semiconductor fabrication. Especially area-selective atomic layer deposition (ALD) is acquiring attention for implementation in self-aligned fabrication schemes. This development builds on earlier successes in the fields of selective epitaxy and area-selective chemical vapor deposition (CVD). Besides nanoelectronics, ASD is expected to enable bottom-up fabrication in catalysis, energy generation and storage.

This ALD Academy is an introduction to ASD, and addresses fundamental aspects related to initial growth, nucleation mechanisms and selectivity. The course is aimed at students, researchers, and engineers that are interested or work in the field of ASD, or work on related technologies such as patterning, deposition or etching. 

Please see for registration and more information.

Gregory ParsonsErwin KesselsAdrie Mackus

Program Chair: 

Andrea Illiberi (ASM, Belgium)
Program Committee: 

Stacey Bent (Stanford University, USA)
Robert Clark (TEL, USA)
Annelies Delabie (IMEC, Belgium, ASD 2016 Chair)
John Ekerdt (University of Texas, USA)
Dennis Hausmann (Lam Research, USA)
Shashi Vyas (Intel, USA)
Erwin Kessels (Eindhoven University of Technology, NL)
Adrie Mackus (Eindhoven University of Technology, NL, ASD 2017 Chair)
Ravindra Kanjolia (EMD Performance Materials, USA)
Jan Willem Maes (ASM, Belgium)
Gregory Parsons (North Carolina State University, USA, ASD 2018 Chair)
Mark Saly (Applied Materials, USA)
Kavita Shah (Nova, USA)
Rami Hourani (Intel, USA)
Anuja DeSilva (IBM, USA)
Local Organizing Committee:

Hessel Sprey (ASM, Belgium)
Marleen Orband (IMEC)
Kathleen Vanderheyden (IMEC)

You are about to register for the ASD-Workshop 2019.

Below you find 2 options to Register: 

1. Are you presenting MSc/PhD student, and/or invited speaker, and/or program member, and/or invited attendee? Register here

2. Is your attendee profile other then all the options in topic 1.  Register here

Reservations need to be made with the hotels directly, by email and using the dedicated reservation form.
The ASD-workshop secretariat is not handling any accommodation arrangements.
Alternative hotel accommodation can be booked via the Tourism Leuven website:

This url gives you an idea of hotels in the Leuven region :

Good hotels in Leuven:

p.s. These are suggestions and price indications checked on 17/01/2019 for the day's of the workshop in April. 


- Average rooms price 60euro-170euro
- IBIS center distance from venue: Walk 1u - Taxi 10min - Public Transport 45min
- IBIS Heverlee High way  distance from venue: Walk 1u30- Taxi 15min - Public Transport n.a.

ibis budget - Average rooms price 50euro-70euro
- IBIS budget station distance from venue: Walk 1u30- Taxi 15min - Public Transport 45min
logo begijnhof

- Average rooms price 120euro-170euro
- Distance from venue: Walk 40min - Taxi 10min - Public Transport 45min
newdamshire logo

- Average rooms price 115euro-130euro
- Distance from venue: Walk 1u - Taxi 10min - Public Transport 1u

- Average rooms price 120euro-150euro
- Distance from venue: Walk 2u - Taxi 15min - Public Transport 1u
image 2016 05 13 13 40 49 5735bd419c925 the lodge heverlee hotel q - Average rooms price 130euro-160euro
- Distance from venue: Walk 10min - Taxi 2min - Public Transport 10min